MV Power Systems
2024
Isolated Gate Driver for SiC MOSFETs
High-performance isolated gate driver design optimized for 1700V SiC MOSFETs with advanced protection features.
Role
Hardware Design Engineer
Client
Power Electronics Lab
Duration
6 months
Year
2024
Technologies
SiC MOSFETsIsolated Gate DriversAltium DesignerEMC DesignHigh-Speed PCBSignal Integrity
Key Highlights
- ✓100kV/us CMTI rating
- ✓Sub-50ns propagation delay
- ✓Integrated desat protection
- ✓Compact 40x30mm form factor
Gate driver design is critical for achieving optimal performance from wide-bandgap semiconductors. This project developed a high-performance isolated gate driver specifically optimized for 1700V SiC MOSFETs in medium voltage applications.
Design Features
Isolation
- Reinforced isolation rated for 5kVrms working voltage
- Common-mode transient immunity > 100kV/us
- Isolated DC-DC power supply with 1W output
Protection
- Desaturation detection with < 1us response time
- Active Miller clamping
- Under-voltage lockout (UVLO)
- Soft turn-off for fault conditions
Performance
- Peak source/sink current: +15A/-20A
- Propagation delay < 50ns
- Pulse width distortion < 5ns
PCB Design
The 4-layer PCB design emphasizes:
- Minimized gate loop inductance
- Proper creepage/clearance distances
- Thermal management for driver ICs